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Archive for December, 2013


Radiation-Hardened SRAM

We hope that everyone enjoyed their Thanksgiving holiday and hope that all have no more leftovers.

For the month of December, we are featuring a Texas Instruments 16MB Radiation-Hardened SRAM, SMV512K32-SP as the product of the month.

This chip is a high performance asynchronous CMOS SRAM organized as 524,288 words by 32 bits. It is pin selectable between two modes: master or slave. The master device selection provides user defined autonomous EDAC scrubbing options. The slave device selection employs a scrub on demand feature that can be initiated by a master device. Three read cycles and four write cycles (described below) are available depending on the user needs.

  • 20-ns Read, 13.8-ns Write Through Maximum
    Access Time
  • Functionally Compatible With Commercial
    512K × 32 SRAM Devices
  • Built-In EDAC (Error Detection and Correction)
    to Mitigate Soft Errors
  • Built-In Scrub Engine for Autonomous Correction
  • CMOS Compatible Input and Output Level,
    Three State Bidirectional Data Bus

    • 3.3 ±0.3-V I/O, 1.8 ±0.15-V CORE
  • Radiation Performance(1)
    • Uses Both Substrate Engineering and Radiation
      Hardened by Design (HBD)(2)
    • TID Immunity > 3e5 rad (Si)
    • SER < 5e-17 Upsets/Bit-Day
      (Core Using EDAC and Scrub)(3)
    • Latch up immunity > LET = 110 MeV
      (T = 398K)
  • Available in a 76-Lead Ceramic Quad Flatpack

(1) Radiation tolerance is a typical value based upon initial device qualification. Radiation Data and Lot Acceptance Testing is available – contact factory for details.
(2) HardSILTM technology and memory design under a license agreement with Silicon Space Technology (SST).
(3) SER calculated using CREME96 for geosynchronous orbit, solar minimum.

Contact us today for all of your hard to fulfill, radiation-hardened, and specialized needs – info@easternstrategicmaterials.com

Photos are for illustrative purposes only and may not reflect current models.